Volume 11, Issue 2, November 2014, Pages 356–362
K.B. Satale1, A.R. Kaushik2, and P.S. Deokar3
1 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
2 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
3 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Low Noise Amplifier (LNA) functions important role in receiver designs. In, microwave receiver LNA circuit plays important role in quality factor of receiver. At radio frequency range, trade-off characteristics like gain, noise figure, stability, power consumption and complexity forces designer for various circuit's simulation for optimizing those. An LNA design presents a considerable challenge because of its simultaneous requirement for high gain, low noise figure, good input and output matching and unconditional stability at the lowest possible current draw from the amplifier. For short range and high data rate wireless applications UWB technology offers a promising solution to the radio frequency. As LNA is most important block included in the UWB front-end RF receiver, we focused this paper on review of LNA design using CMOS technique.
Author Keywords: Low Noise Amplifier (LNA), Ultra Wide Band (UWB), Complementary Metal Oxide Semiconductor (CMOS), Signal to Noise Ratio (SNR).
K.B. Satale1, A.R. Kaushik2, and P.S. Deokar3
1 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
2 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
3 Assistant Professor, Department of Electronics and Telecommunication, KVNNIEER, Nashik, India
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Low Noise Amplifier (LNA) functions important role in receiver designs. In, microwave receiver LNA circuit plays important role in quality factor of receiver. At radio frequency range, trade-off characteristics like gain, noise figure, stability, power consumption and complexity forces designer for various circuit's simulation for optimizing those. An LNA design presents a considerable challenge because of its simultaneous requirement for high gain, low noise figure, good input and output matching and unconditional stability at the lowest possible current draw from the amplifier. For short range and high data rate wireless applications UWB technology offers a promising solution to the radio frequency. As LNA is most important block included in the UWB front-end RF receiver, we focused this paper on review of LNA design using CMOS technique.
Author Keywords: Low Noise Amplifier (LNA), Ultra Wide Band (UWB), Complementary Metal Oxide Semiconductor (CMOS), Signal to Noise Ratio (SNR).
How to Cite this Article
K.B. Satale, A.R. Kaushik, and P.S. Deokar, “CMOS LNA Design for Ultra Wide Band - Review,” International Journal of Innovation and Scientific Research, vol. 11, no. 2, pp. 356–362, November 2014.
